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2SK2118 Scheda tecnica(PDF) 3 Page - Hitachi Semiconductor |
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2SK2118 Scheda tecnica(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK2118 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 600 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS =500 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 1.1 1.5 Ω I D = 2.5 A V GS = 10 V* 1 Forward transfer admittance |y fs| 3.0 5.0 — S I D = 2.5 A V DS = 10 V* 1 Input capacitance Ciss — 1000 — pF V DS = 10 V Output capacitance Coss — 250 — pF V GS = 0 Reverse transfer capacitance Crss — 45 — pF f = 1 MHz Turn-on delay time t d(on) — 12 — ns I D = 2.5 A Rise time t r — 45 — ns V GS = 10 V Turn-off delay time t d(off) — 105 — ns R L = 12Ω Fall time t f —55—ns Body to drain diode forward voltage V DF — 0.9 — V I F = 5 A, VGS = 0 Body to drain diode reverse recovery time t rr — 500 — ns I F = 5 A, VGS = 0, di F / dt = 100 A / µs Note 1. Pulse Test See characteristic curve of 2SK1404. |
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