2SK1838L datasheet(3/8 Pages) HITACHI

Il numero della parte	2SK1838L

Spiegazioni elettronici	Silicon N-Channel MOS FET

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

Homepage	http://www.renesas.com/eng

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2SK1838(L), 2SK1838(S)

3

20

15

10

5

0

50

100

150

200

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V

(V)

DS

13

10

30

100

300

1000

0.1

0.3

1

3

10

100

s

PW

=

10

ms

(1

shot)

Operation in this area

is limited by R

(on)

DS

1 ms

Ta = 25°C

0.03

0.01

DC

Operation

(Tc

=

25°C)

Maximum Safe Operation Area

Drain to Source Voltage V

(V)

DS

0

2

4

6

810

0.2

0.4

0.6

0.8

1.0

Pulse Test

8 V

10 V

6 V

4.5 V

4 V

V

= 3.5 V

GS

5 V

Typical Output Characteristics

Gate to Source Voltage V

(V)

GS

Tc = 75°C

25°C

– 25°C

Pulse Test

V

= 10 V

DS

0

2

46

810

0.2

0.4

0.6

0.8

1.0

Typical Transfer Characteristics

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2SK1838L Scheda tecnica(PDF) 3 Page - Hitachi Semiconductor

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