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2SK1808 Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SK1808 Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SK1808 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 900 V Gate to source voltage V GSS ±30 V Drain current I D 4A Drain peak current I D(pulse)* 1 10 A Body to drain diode reverse drain current I DR 4A Channel dissipation Pch* 2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C |
Codice articolo simile - 2SK1808 |
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Descrizione simile - 2SK1808 |
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