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2SK1671 Scheda tecnica(PDF) 5 Page - Hitachi Semiconductor |
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2SK1671 Scheda tecnica(HTML) 5 Page - Hitachi Semiconductor |
5 / 8 page 2SK1671 5 200 5 100 10 0.5 20 50 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, V GS = 0 Ta = 25°C, Pulse Test 5 110 20 2 500 50 Reverse Drain Current IDR (A) 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 500 80 200 Gate Charge Qg (nc) 400 40 120 0 160 300 200 100 ID = 30 A Pulse Test VDS Dynamic Input Characteristics VDD = 50V 100 V 200 V VGS 20 16 12 8 4 0 0 VDD = 200 V 100 V 50 V 500 250 Drain Current ID (A) 200 20 15 20 5 50 100 0.5 10 Switching Characteristics tf td (off) tr VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% td (on) 10 = . . |
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