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2SK1335 Scheda tecnica(PDF) 5 Page - Hitachi Semiconductor |
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2SK1335 Scheda tecnica(HTML) 5 Page - Hitachi Semiconductor |
5 / 8 page 2SK1335(L), 2SK1335(S) 5 1,000 0.2 5 Reverse Drain Current IDR (A) 500 50 0.1 0.5 2 10 100 200 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs, V GS = 0 Ta = 25°C Pulse Test 0.05 20 1 20 50 Drain to Source Voltage VDS (V) 1,000 10 30 40 1 100 Typical Capacitance vs. Drain to Source Voltage 0 10 Crss Coss Ciss VGS = 10V Pulse Test 500 820 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 412 16 0 200 300 VDS 50 V 20 16 4 0 8 12 VDD = 50 V 100 V 150 V ID = 3 A 100 V VDD = 150 V VGS 500 0.2 3 Drain Current ID (A) 200 20 0.1 0.5 2 5 50 100 0.05 10 1 Switching Characteristics tf td (on) tr VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (off) • • |
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