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STP3052D Scheda tecnica(PDF) 2 Page - Stanson Technology |
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STP3052D Scheda tecnica(HTML) 2 Page - Stanson Technology |
2 / 6 page STP3052D P Channel Enhancement Mode MOSFET - 25.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STP3052D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -25.0 -18.0 A Pulsed Drain Current IDM -100 A Continuous Source Current (Diode Conduction) IS -15 A Power Dissipation TA=25℃ TA=70℃ PD 40 20 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 ℃/W |
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