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2SK1153 Scheda tecnica(PDF) 6 Page - Hitachi Semiconductor |
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2SK1153 Scheda tecnica(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1153, 2SK1154 6 Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) 1,000 500 100 50 20 10 200 0.05 0.1 0.2 0.5 1.0 2 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 1,000 100 10 1 010 20 30 40 50 Drain to Source Voltage VDS (V) Coss Ciss Crss VGS = 0 f = 1 MHz Dynamic Input Characteristics 500 400 300 200 100 0 4 8 12 16 20 Gate Charge Qg (nc) 20 16 12 8 4 0 400 V VDS ID = 3 A VGS 250 V VDD = 400 V 250 V 100 V VDD = 100 V Switching Characteristics 500 100 50 20 10 5 200 0.05 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) tf VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% td (on) tr td (off) • • |
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