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2SJ319L Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SJ319L Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SJ319(L), 2SJ319(S) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –200 V Gate to source voltage V GSS ±20 V Drain current I D –3 A Drain peak current I D(pulse)* 1 –12 A Body to drain diode reverse drain current I DR –3 A Channel dissipation Pch* 2 20 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T C = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS –200 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16 V, VDS = 0 Zero gate voltage drain current I DSS — — –100 µAV DS = –160 V, VGS = 0 Gate to source cutoff voltage V GS(off) –2.0 — –4.0 V I D = –1 mA, VDS = –10 V Static drain to source on state resistance R DS(on) — 1.7 2.3 Ω I D = –2 A, VGS = –10 V* 1 Forward transfer admittance |y fs| 1.0 1.7 — S I D = –2 A, VDS = –10 V* 1 Input capacitance Ciss — 330 — pF V DS = –10 V, VGS = 0, Output capacitance Coss — 130 — pF f = 1 MHz Reverse transfer capacitance Crss — 25 — pF Turn-on delay time t d(on) — 10 — ns I D = –2 A, VGS = –10 V, Rise time t r — 30 — ns R L = 15 Ω Turn-off delay time t d(off) —40 — ns Fall time t f —30 — ns Body to drain diode forward voltage V DF — –1.15 — V I F = –3 A, VGS = 0 Body to drain diode reverse recovery time t rr — 180 — ns I F = –3 A, VGS = 0, di F/dt = 50 A/µs Note: 1. Pulse test |
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