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2SJ317 Scheda tecnica(PDF) 3 Page - Hitachi Semiconductor

Il numero della parte 2SJ317
Spiegazioni elettronici  Silicon P-Channel MOS FET
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Produttore elettronici  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ317 Scheda tecnica(HTML) 3 Page - Hitachi Semiconductor

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2SJ317
3
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature
Ta (°C)
Maximun Power Dissipation Curve
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
–1.0
–3
–10
–30
–100
Drain to Source Voltage
V
(V)
DS
Operation in this Area
is limited by RDS(on)
DC
Operation
(Tc=25°C)
PW = 1 ms
1 shot
Ta = 25°C
Maximun Safe Operation Area
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
(V)
DS
V
= –1 V
–2.5
–2
–1.5
GS
Pulse test
–3
–4
–5
Typical Output Characteristics
–5
–4
–3
–2
–1
0–1
–2
–3
–4
–5
Gate to Source Voltage
V
(V)
GS
V
= –5 V
Pulse test
DS
Ta = –25°C
25°C
75°C
Typical Forward Transfer Characteristics


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