2SJ217 datasheet(2/9 Pages) HITACHI

Il numero della parte	2SJ217

Spiegazioni elettronici	Silicon P-Channel MOS FET

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

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2SJ217

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

–60

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

–45

A

Drain peak current

I

D(pulse)*

1

–180

A

Body to drain diode reverse drain current

I

DR

–45

A

Channel dissipation

Pch*

2

150

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes

1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at T

C = 25°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V

(BR)DSS

–60

—

V

I

D = –10 mA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

——V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±10

µAV

GS = ±16 V, VDS = 0

Zero gate voltage drain current I

DSS

—

–250

µAV

DS = –50 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

–1.0

—

–2.0

V

I

D = –1 mA, VDS = –10 V

Static drain to source on state

R

DS(on)

—

0.033

0.042

Ω

I

D = –20 A, VGS = –10 V*

1

resistance

—

0.045

0.06

I

D = –20 A, VGS = –4 V*

1

Forward transfer admittance

|y

fs|

1625—

S

I

D = –20 A, VDS = –10 V*

1

Input capacitance

Ciss

—

3800

—

pF

V

DS = –10 V, VGS = 0,

Output capacitance

Coss

—

2000

—

pF

f = 1 MHz

Reverse transfer capacitance

Crss

—

490

—

pF

Turn-on delay time

t

d(on)

—

30

—

ns

I

D = –20 A, VGS = –10 V,

Rise time

t

r

—

235

—

ns

R

L = 1.5 Ω

Turn-off delay time

t

d(off)

—

670

—

ns

Fall time

t

f

—

450

—

ns

Body to drain diode forward

voltage

V

DF

—

–1.35

—

V

I

F = –45 A, VGS = 0

Body to drain diode reverse

recovery time

t

rr

—

300

—

ns

I

F = –45 A, VGS = 0,

di

F/dt = 50 A/µs

Note

1. Pulse test

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