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2SJ161 Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor |
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2SJ161 Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SJ160, 2SJ161, 2SJ162 4 150 100 50 0 50 100 150 Case Temperature TC (°C) Power vs. Temperature Derating –20 –5 –1.0 –0.2 –20 –100 –500 Drain to Source Voltage VDS (V) Maximum Safe Operation Area –10 –0.5 –5 –10 –50 –200 Ta = 25°C PW = 100 ms (1 Shot) ID max (Continuous) (–14.3 V, –7 A) (–140 V, –0.71 A) (–160 V, –0.63 A) 2SJ160 2SJ161 2SJ162 (–120 V, –0.83 A) –2 –10 –20 –50 Drain to Source Voltage VDS (V) Typical Output Characteristics –8 –2 –10 –30 –40 TC = 25°C 0 –4 –6 –2 V GS = 0 –1 V –3 –4 –5 –6 –7 –8 Pch = 100 W –1.0 –0.8 –2.0 Gate to Source Voltage VGS (V) Typical Transfer Characteristics –0.8 –0.2 –0.4 –1.2 –1.6 0 –0.4 –0.6 VDS = –10 V |
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