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2SD2115L Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SD2115L Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SD2115(L)/(S) 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 150 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 60 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 1 mA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 100 V, IE = 0 DC current transfer ratio h FE 150 — — V CE = 5 V, IC = 1.5 A* 1 Collector to emitter saturation voltage V CE(sat) — — 0.8 V I C = 1.5 A, IB = 0.05 A* 1 Base to emitter saturation voltage V BE(sat) — — 1.3 V I C = 1.5 A, IB = 0.05 A* 1 Fall time t f — — 0.6 µsI C = 1.5 A, IB1 = –IB2 = 50 mA Note: 1. Pulse test. Maximum Collector Dissipation Curve 30 20 10 0 50 100 150 Case temperature TC (°C) 3.0 0.3 1.0 0.1 0.03 110 3 30 100 Collector to emitter voltage VCE (V) Ta = 25 °C, 1 shot pulse iC(peak) IC(max) Area of Safe Operation |
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