2SD2115L datasheet(2/5 Pages) HITACHI

Il numero della parte	2SD2115L

Spiegazioni elettronici	Silicon NPN Epitaxial Planar(Low frequency power amplifier)

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

Homepage	http://www.renesas.com/eng

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2SD2115(L)/(S)

2

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

150

—

V

I

C = 1 mA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

60

—

V

I

C = 10 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

5—

—

V

I

E = 1 mA, IC = 0

Collector cutoff current

I

CBO

——

10

µAV

CB = 100 V, IE = 0

DC current transfer ratio

h

FE

150

—

V

CE = 5 V, IC = 1.5 A*

1

Collector to emitter saturation

voltage

V

CE(sat)

—

0.8

V

I

C = 1.5 A, IB = 0.05 A*

1

Base to emitter saturation

voltage

V

BE(sat)

—

1.3

V

I

C = 1.5 A, IB = 0.05 A*

1

Fall time

t

f

—

0.6

µsI

C = 1.5 A, IB1 = –IB2 = 50 mA

Note:

1. Pulse test.

Maximum Collector Dissipation Curve

30

20

10

0

50

100

150

Case temperature TC (°C)

3.0

0.3

1.0

0.1

0.03

110

3

30

100

Collector to emitter voltage VCE (V)

Ta = 25

°C,

1 shot pulse

iC(peak)

IC(max)

Area of Safe Operation

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