2SD1609, 2SD1610

Silicon NPN Epitaxial

Application

Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110

Outline

1. Emitter

2. Collector

3. Base

TO-126 MOD

1

2

3

Absolute Maximum Ratings (Ta = 25°C)

Ratings

Item

Symbol

2SD1609

2SD1610

Unit

Collector to base voltage

V

CBO

160

200

V

Collector to emitter voltage

V

CEO

160

200

V

Emitter to base voltage

V

EBO

55V

Collector current

I

C

100

100

mA

Collector power dissipation

P

C

1.25

1.25

W

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

–45 to +150

–45 to +150

°C