2SD1609 datasheet(2/6 Pages) HITACHI

Il numero della parte	2SD1609

Spiegazioni elettronici	Silicon NPN Epitaxial

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

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2SD1609, 2SD1610

2

Electrical Characteristics (Ta = 25°C)

2SD1609

2SD1610

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

160

—

200

—

V

I

C = 10 µA, IE = 0

Collector to emitter

breakdown voltage

V

(BR)CEO

160

—

200

—

V

I

C = 1 mA, RBE = ∞

Emitter to base

breakdown voltage

V

(BR)EBO

5—

—

5

—

V

I

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

——10—

—

µAV

CB = 140 V, IE = 0

—

———

10

V

CB = 160 V, IE = 0

DC current tarnsfer ratio h

FE1*

1

60

—

320

60

—

320

V

CE = 5 V, IC = 10 mA

h

FE2

30

—

30

—

V

CE = 5 V, IC = 1 mA

Base to emitter voltage

V

BE

—

1.5

—

1.5

V

CE = 5 V, IC = 10 mA

Collector to emitter

saturation voltage

V

CE(sat)

——2

—

2

V

I

C = 30 mA, IB = 3 mA

Gain bandwidth product f

T

—

140

—

140

—

MHz

V

CE = 5 V, IC = 10 mA

Collector output

capacitance

Cob

—

3.8

—

3.8

—

pF

V

CB = 10 V, IE = 0,

f = 1 MHz

Note:

1. The 2SD1609 and 2SD1610 are grouped by h

FE1 as follows.

BC

D

60 to 120

100 to 200

160 to 320

Maximum Collector Dissipation

Curve

1.5

1.0

0.5

0

50

100

150

Ambient temperature Ta (

°C)

Typical Output Characteristics

20

16

12

8

4

02

4

Collector to emitter voltage VCE (V)

10

8

6

IB = 0

10

µA

20

30

40

60

70

80

90

100

110

120

50

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