2SD1138 datasheet(2/6 Pages) HITACHI

Il numero della parte	2SD1138

Spiegazioni elettronici	Silicon NPN Triple Diffused

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

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2SD1138

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Collector to base voltage

V

CBO

200

V

Collector to emitter voltage

V

CEO

150

V

Emitter to base voltage

V

EBO

6V

Collector current

I

C

2A

Collector peak current

I

C (peak)

5A

Collector power dissipation

P

C

1.8

W

P

C*

1

30

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note:

1. Value at T

C = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

voltage

V

(BR)CEO

150

—

V

I

C = 50 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

6—

—

V

I

E = 5 mA, IC = 0

Collector cutoff current

I

CBO

——

1

µAV

CB = 120 V, IE = 0

DC current transfer ratio

h

FE1*

1

60

—

320

V

CE = 4 V, IC = 50 mA

h

FE2

60

—

V

CE = 10 V, IC = 500 mA*

2

Collector to emitter saturation

voltage

V

CE (sat)

—

3.0

V

I

C = 500 mA, IB = 50 mA*

2

Base to emitter voltage

V

BE

—

1.0

V

CB = 4 V, IC = 50 mA

Collector output capacitance

Cob

—

20

—

pF

V

CB = 100 V, IE = 0, f = 1 MHz

Note:

1. The 2SD1138 is grouped by h

FE1 as follows.

2. Pulse test.

BC

D

60 to 120

100 to 200

160 to 320

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