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2SC4499 Scheda tecnica(PDF) 4 Page - Hitachi Semiconductor |
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2SC4499 Scheda tecnica(HTML) 4 Page - Hitachi Semiconductor |
4 / 8 page 2SC4499(L)/(S) 4 Reverse Bias Area of Safe Operation 1.0 0.8 0.6 0.4 0.2 0 100 IB2 = –0.1 A 350 V, 1 A 400 V, 0.5 A 450 V, 0.1 A 200 300 400 500 Collector to emitter voltage VCE (V) Collector to Emitter Voltage vs. Base to Emitter Resistance 600 IC = 1 mA 500 400 300 100 1 k Base to emitter resistance RBE (Ω) 10 k 100 k 1 M Typical Output Characteristics TC = 25°C IB = 0 5 mA 10 20 30 40 50 0.5 0.4 0.3 0.2 0.1 01 2 Collector to emitter voltage VCE (V) 5 4 3 VCE = 5 V Ta = 25 °C 1.0 0.8 0.6 0.4 0.2 0 0.4 0.8 Base to emitter voltage VBE (V) 1.2 1.6 2.0 Typical Transfer Characteristics |
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