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2SC4367 Scheda tecnica(PDF) 2 Page - Hitachi Semiconductor |
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2SC4367 Scheda tecnica(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SC4367 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 20 V Emitter to base voltage V EBO 3V Collector current I C 100 mA Collector peak current i C (peak) 200 mA Collector power dissipation P C 600 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 ——V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 20 ——V I C = 3 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 3 ——V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 1.0 µAV CB = 10 V, IE = 0 DC current transfer ratio h FE 40 — — V CE = 10 V, IC = 10 mA Collector to emitter saturation voltage V CE(sat) — — 1.0 V I C = 20 mA, IB = 4 mA Gain bandwidth product f T 600 1000 — MHz V CE = 10 V, IC = 10 mA Collector output capacitance Cob — 1.3 — pF V CB = 10 V, IE = 0, f = 1 MHz |
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