GS421SD datasheet(2/2 Pages) ETL

Il numero della parte	GS421SD

Spiegazioni elettronici	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A

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Produttore elettronici	ETL [E-Tech Electronics LTD]

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CORPORATION

GS421SD

Page: 2/2

ISSUED DATE :2005/12/20

REVISED DATE :

Characteristics Curve

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GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

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Codice articolo simile - GS421SD

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
GTM CORPORATION	GS421SD	150Kb / 2P	SURFACE MOUNT SCHOTTKY BARRIER DIODE

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
E-Tech Electronics LTD	GS420SD	169Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 1 A
	GS401SD	168Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 5 A
	GS400SD	153Kb / 2P	S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O L T A G E 4 0 V, C U R R E N T 0 . 5 A
	GD401SD	166Kb / 2P	S U R F A C E M O U N T , S C H O T T K Y B A R R I E R D I O D E R R I E R D I O D E
	GSBAT54-A-C-S	343Kb / 2P	S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 3 0 V, C U R R E N T 2 0 0mA
	GDBAS40	171Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A
	GDBAS70	133Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A
	GDBAT54	281Kb / 2P	S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA
	GSBAS40	214Kb / 2P	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A
	GD103SD	197Kb / 2P	S U R FA C E MO U N T, S C H O T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 3 5 0mA