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ADC0805 Scheda tecnica(PDF) 2 Page - Texas Instruments |
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ADC0805 Scheda tecnica(HTML) 2 Page - Texas Instruments |
2 / 49 page ADC0801, ADC0802 ADC0803, ADC0804, ADC0805 SNOSBI1B – NOVEMBER 2009 – REVISED FEBRUARY 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. TYPICAL APPLICATIONS 8080 Interface ERROR SPECIFICATION (Includes Full-Scale, Zero Error, and Non-Linearity) VREF/2 = 2.500 VDC VREF/2 = No Connection FULL-SCALE PART NUMBER ADJUSTED (No Adjustments) (No Adjustments) ADC0801 ±1 ⁄4 LSB ADC0802 ±1 ⁄2 LSB ADC0803 ±1 ⁄2 LSB ADC0804 ±1 LSB ADC0805 ±1 LSB ABSOLUTE MAXIMUM RATINGS If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for availability and specifications. VALUE UNIT Supply voltage (VCC) (1) 6.5 V Logic control inputs –0.3 to +18 V Voltage At other input and outputs –0.3 to (VCC +0.3) V Dual-In-Line Package (plastic 260 °C Dual-In-Line Package (ceramic) 300 °C Lead Temperature (Soldering, 10 seconds) Surface Mount Package Vapor Phase (60 seconds) 215 °C Infrared (15 seconds) 220 °C Storage Temperature Range –65 to +150 °C Package Dissipation at TA = 25°C 875 mW ESD Susceptibility(2) 800 V (1) A zener diode exists, internally, from VCC to GND and has a typical breakdown voltage of 7 VDC. (2) Human body model, 100 pF discharged through a 1.5 k Ω resistor. 2 Submit Documentation Feedback Copyright © 2009–2013, Texas Instruments Incorporated Product Folder Links: ADC0801, ADC0802 ADC0803, ADC0804, ADC0805 |
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