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BAT85 Scheda tecnica(PDF) 2 Page - General Semiconductor

Il numero della parte BAT85
Spiegazioni elettronici  Schottky Diodes
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Produttore elettronici  GE [General Semiconductor]
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Logo GE - General Semiconductor

BAT85 Scheda tecnica(HTML) 2 Page - General Semiconductor

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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BAT85
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
tested with 10
µA Pulses
V(BR)R
30
––V
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 1 mA
at IF = 10 mA
at IF = 30 mA
at IF = 100 mA
VF
VF
VF
VF
VF
0.5
0.24
0.32
0.4
0.8
V
V
V
V
V
Leakage Current
at VR = 25 V
IR
––2
µA
Capacitance
at VR = 1 V, f = 1 MHz
Ctot
––10
pF
Thermal Resistance
Junction to Ambient Air
RthJA
––0.431)
K/mW
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA to IR = 1 mA
trr
––5ns
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.


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