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2SK3377-Z Scheda tecnica(PDF) 1 Page - NEC |
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2SK3377-Z Scheda tecnica(HTML) 1 Page - NEC |
1 / 4 page © 1999,2000 MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14328EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 m Ω MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m Ω MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in Gate Protection Diode • TO-251/TO-252 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±20 A Drain Current (Pulse) Note1 ID(pulse) ±50 A Total Power Dissipation (TC = 25°C) PT 30 W Total Power Dissipation (TA = 25°C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 15 A Single Avalanche Energy Note2 EAS 23 mJ Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V THERMAL RESISTANCE Channel to Case Rth(ch-C) 4.17 °C/W Channel to Ambient Rth(ch-A) 125 °C/W ORDERING INFORMATION PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 5 5 5 5 5 5 (TO-251) (TO-252) |
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