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2SK3325-S Scheda tecnica(PDF) 7 Page - NEC |
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2SK3325-S Scheda tecnica(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14264EJ1V0DS00 7 2SK3325 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut) 3)TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 (10) 4 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 (10) 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. |
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