2SK3108 datasheet(1/8 Pages) NEC

Il numero della parte	2SK3108

Spiegazioni elettronici	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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©

1998,2000

MOS FIELD EFFECT TRANSISTOR

2SK3108

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

Document No. D13331EJ1V0DS00 (1st edition)

Date Published January 2000 NS CP (K)

Printed in Japan

DATA SHEET

The mark 5 shows major revised points.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SK3108 is N channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

and designed for high voltage applications such as DC/DC

converter.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

RDS(on) = 0.4

Ω MAX. (VGS = 10 V, ID = 4.0 A)

•Low input capacitance

Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)

•Avalanche capability rated

•Built-in gate protection diode

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

200

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±30

V

Drain Current(DC) (TC = 25°C)

ID(DC)

±8.0

A

Drain Current(pulse)

Note1

ID(pulse)

±24

A

Total Power Dissipation (TA = 25°C)

PT1

2.0

W

Total Power Dissipation (TC = 25°C)

PT2

25

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note2

IAS

8.0

A

Single Avalanche Energy

Note2

EAS

51

mJ

Note1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 100 V, RG = 25

Ω , VGS = 20 V→0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3108

Isolated TO-220

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