SI4825DDY datasheet(3/10 Pages) VISHAY

Il numero della parte	SI4825DDY

Spiegazioni elettronici	P-Channel 30-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 68926

S-82484-Rev. A, 13-Oct-08

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Vishay Siliconix

Si4825DDY

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

12

24

36

48

60

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 4 V

VGS =3 V

VGS =1 V, 2 V

0.005

0.010

0.015

0.020

0.025

0.030

0

1020

304050

60

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

0

2

4

6

8

10

0

1224

3648

60

ID =10A

Qg - Total Gate Charge (nC)

DS =10 V

V

DS =15 V

V

VDS = 20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

012345

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

0

800

1600

2400

3200

4000

0

5

10

15

20

25

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

ID = - 10 A

VGS = - 10 V

VGS = - 4.5 V

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