SI4825DDY datasheet(1/10 Pages) VISHAY

Il numero della parte	SI4825DDY

Spiegazioni elettronici	P-Channel 30-V (D-S) MOSFET

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Vishay Siliconix

Si4825DDY

New Product

Document Number: 68926

S-82484-Rev. A, 13-Oct-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Power MOSFET

•100 % Rg Tested

•100 % UIS Tested

APPLICATIONS

•

Load Switch

•

Notebook Adaptor Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on TC = 25 °C.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

- 30

0.0125 at VGS = - 10 V

- 14.9

29.5 nC

0.0205 at VGS = - 4.5 V

- 11.6

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 25

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 14.9

A

TC = 70 °C

- 11.9

TA = 25 °C

- 10.9a, b

TA = 70 °C

- 8.6a, b

Pulsed Drain Current

IDM

- 60

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 4.1

TA = 25 °C

- 2.2a, b

Avalanche Current

L = 0.1 mH

IAS

- 20

Single-Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

5.0

W

TC = 70 °C

3.2

TA = 25 °C

2.7a, b

TA = 70 °C

1.7a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, c

t

≤ 10 s

RthJA

38

46

°C/W

Maximum Junction-to-Foot

Steady State

RthJF

20

25

S

G

D

P-Channel MOSFET

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4825DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

RoHS

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