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2SK2857 Scheda tecnica(PDF) 1 Page - NEC |
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2SK2857 Scheda tecnica(HTML) 1 Page - NEC |
1 / 8 page © 1998,1999 MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Document No. D11648EJ2V0DS00 (2nd edition) Date Published March 1999 NS CP (K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. PACKAGE DRAWING (Unit : mm) 1 2 3 4.5±0.1 1.6±0.2 0.42 0.42 ±0.06 ±0.06 ±0.06 1.5 3.0 1.5±0.1 0.41 +0.03 -0.05 0.47 DESCRIPTION The 2SK2857 is a switching device which can be driven directly by a 5V power source. The 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver. FEATURES • Can be driven by a 5V power source. • Low On-state resistance : RDS(on)1 = 220 m Ω MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m Ω MAX. (VGS = 10 V, ID = 2.5 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±4 A Drain Current (pulse) Note1 ID(pulse) ±16 A Total Power Dissipation Note2 PT 2W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic board of 16 cm 2 × 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. EQUIVALENT CIRCUIT Source Internal Diode Gate Protection Diode Gate Drain Electrode Connection 1.Souce 2.Drain 3.Gate The mark • • • • shows major revised points. Marking : NX |
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