©

1998,1999

MOS FIELD EFFECT TRANSISTOR

2SK2857

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

Document No. D11648EJ2V0DS00 (2nd edition)

Date Published March 1999 NS CP (K)

Printed in Japan

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

PACKAGE DRAWING (Unit : mm)

1

2

3

4.5±0.1

1.6±0.2

0.42

0.42

±0.06

±0.06

±0.06

1.5

3.0

1.5±0.1

0.41

+0.03

-0.05

0.47

DESCRIPTION

The 2SK2857 is a switching device which can be driven directly

by a 5V power source.

The 2SK2857 features a low on-state resistance and excellent

Switching Characteristics, and is suitable for applications such as

actuator driver.

FEATURES

• Can be driven by a 5V power source.

• Low On-state resistance :

Drain to Source Voltage

60

V

Gate to Source Voltage

±20

V

Drain Current (DC)

±4

A

Drain Current (pulse)

Note1

±16

A

Total Power Dissipation

Note2

2W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic board of 16 cm

2

× 0.7 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device is actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

EQUIVALENT CIRCUIT

Source

Internal

Diode

Gate

Protection

Diode

Gate

Drain

Electrode

Connection

1.Souce

2.Drain

3.Gate

The mark

•

•

•

• shows major revised points.

Marking : NX