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TD511D485H Scheda tecnica(PDF) 2 Page - MORNSUN Science& Technology Ltd. |
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TD511D485H Scheda tecnica(HTML) 2 Page - MORNSUN Science& Technology Ltd. |
2 / 3 page The copyright and authority for the interpretation of the products are reserved by MORNSUN TDx11D485H 2013.12.04-A/1 Page 2 of3 ISOLATION CHARACTERISTICS Galvanic Isolation 2-port isolation(input and output) Isolation Voltage 2.5KVDC(Tested for 1minute and leakage current < 5mA, humidity <95%) EMC SPECIFICATIONS EMI CE CISPR22/EN55022 CLASSA (External Circuit Refer to Figure 1-②) RE CISPR22/EN55022 CLASSA (External Circuit Refer to Figure 1-②) EMS ESD IEC/EN61000-4-2 Contact ±4KV perf. CriteriaB RS IEC/EN61000-4-3 10V/m perf. CriteriaA EFT IEC/EN61000-4-4 Power Port ±2KV perf. CriteriaB (External Circuit Refer to Figure 1-①) IEC/EN61000-4-4 Signal Port ±1KV perf. CriteriaB (External Circuit Refer to Figure 1-③) EMS Surge IEC/EN61000-4-5 Power Port ±1KV/2KV perf.CriteriaB (External Circuit Refer to Figure 1-①) IEC/EN61000-4-5 Signal Port ±4KV/6KV perf. CriteriaB (External Circuit Refer to Figure 1-③) CS IEC/EN61000-4-6 3 Vr.m.s perf. CriteriaA OTHER CHARACTERISTICS Ambient Temperature Operating temperature:-40℃~+85℃ Transport and Storage temperature:-50℃~+105℃ Size 19.9*16.9*7.05 (mm) Weight 4g Application Environment The presence of dust, fierce vibration, impulsion and corrosive gas may cause damage to the product EMC RECOMMENDED CIRCUIT G ND + TXD L1 R XD C ON R GND A B 1 2 3 4 5 10 9 8 T V S 1 C1 C2 C3 ① ② R2 T V S2 R3 T V S3 T V S4 GD T1 R1 C4 ③ TDx11D 485H 7 Vo VCC C5 C6 (Figure1) Recommended external circuit parameters: Model TD311D485H TD511D485H C1 220uF/10V TVS1 SMCJ5.0A SMCJ6.5A C2,C3 1uF /25V L1 10 μH C4 1nF /2KV R1 1M Ω C5,C6 100pF/100V TVS2,TVS3, TVS4 SMBJ15CA R2,R3 10 Ω/2W(Wire wound resistance) GDT1 B3D090L-C |
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