SI7922DN-T1 datasheet(10/12 Pages) VISHAY

Il numero della parte	SI7922DN-T1

Spiegazioni elettronici	Dual N-Channel 100-V (D-S) MOSFET

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Document Number 71681

03-Mar-06

Vishay Siliconix

AN822

CONCLUSIONS

As a derivative of the PowerPAK SO-8, the PowerPAK

1212-8 uses the same packaging technology and has

been shown to have the same level of thermal perfor-

mance while having a footprint that is more than 40 %

smaller than the standard TSSOP-8.

Recommended PowerPAK 1212-8 land patterns are

provided to aid in PC board layout for designs using this

new package.

The PowerPAK 1212-8 combines small size with attrac-

tive thermal characteristics. By minimizing the thermal

rise above the board temperature, PowerPAK simplifies

thermal design considerations, allows the device to run

cooler, keeps rDS(ON) low, and permits the device to

handle more current than a same- or larger-size MOS-

FET die in the standard TSSOP-8 or SO-8 packages.

Figure 5. Spreading Copper - Si7401DN

45

55

65

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105

0.00

0.25

0.50

0.75

1.00

1.25

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1.75

2.00

Spreading Copper (sq. in.)

100 %

50 %

0 %

Figure 6. Spreading Copper - Junction-to-Ambient Performance

50

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100

110

120

130

0.00

0.25

0.50

0.75

1.00

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1.50

1.75

2.00

Spreading Copper (sq. in.)

100 %

0 %

50 %

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