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STP100N10F7 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STP100N10F7 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 23 page Electrical characteristics STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 4/23 DocID023737 Rev 4 2 Electrical characteristics (T CASE =25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS Drain-source breakdown voltage (V GS = 0) I D = 250 μA 100 - V I DSS Zero gate voltage drain current (V GS = 0) V DS = 100 V V DS = 100 V; T C =125 °C 1 100 μA μA I GSS Gate body leakage current (V DS = 0) V GS = 20 V 100 nA V GS(th) Gate threshold voltage V DS = V GS , I D = 250 μA2.5 4.5 V R DS(on) Static drain-source on- resistance For D 2 PAK, DPAK and TO-220 V GS = 10 V, I D = 40 A For TO-220-FP V GS = 10 V, I D = 22.5 A 0.0068 0.008 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance V DS =50 V, f=1 MHz, V GS =0 - 4369 - pF C oss Output capacitance - 823 - pF C rss Reverse transfer capacitance -36 - pF Q g Total gate charge V DD =50 V, I D = 80 A V GS =10 V Figure 18 -61 - nC Q gs Gate-source charge - 26 - nC Q gd Gate-drain charge - 13 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD =50 V, I D = 40 A, R G =4.7 Ω, V GS = 10 V Figure 17 -27 - ns t r Rise time - 40 - ns t d(off) Turn-off delay time - 46 - ns t f Fall time - 15 - ns |
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