STF1N105K3 datasheet(3/18 Pages) STMICROELECTRONICS

Il numero della parte	STF1N105K3

Spiegazioni elettronici	N-channel 1050 V, 8 廓 typ., 1.4 A SuperMESH3??Power MOSFET in TO-220FP, TO-3PF and TO-220 packages

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STF1N105K3, STFW1N105K3, STP1N105K3

Electrical ratings

Doc ID 023509 Rev 2

3/18

1

Electrical ratings

.

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

TO-220

V

DS

Drain source voltage

1050

V

GS

Gate- source voltage

± 30

V

I

D

Drain current (continuous) at T

C

= 25 °C

1.4

(1)

1.

Limited by maximum junction temperature.

1.4

A

I

D

Drain current (continuous) at T

C

= 100 °C

0.9

(1)

0.9

A

I

DM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

5.6

(1)

5.6

A

P

TOT

Total dissipation at T

C

= 25 °C

20

60

W

I

AR

Max current during repetitive or single

pulse avalanche (pulse width limited by

T

jmax

)

1.2

A

E

AS

Single pulse avalanche energy

(starting T

J

= 25 °C, I

D

=I

IAR

, V

DD

= 50 V)

130

mJ

V

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

3500

V

dv/dt

(3)

3.

I

SD

≤ 1.4 A, di/dt ≤ 100 A/μs, V

DD

= 80% V

(BR)DSS

, V

DS

peak

≤ V

(BR)DSS.

Peak diode recovery voltage slope

6

V/ns

T

j

T

stg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

TO-220

Rthj-case

Thermal resistance junction-case max

6.25

2.08

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.50

50

62.50

°C/W

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