FQD13N06TM datasheet(1/8 Pages) FAIRCHILD

Il numero della parte	FQD13N06TM

Spiegazioni elettronici	N-Channel QFET짰 MOSFET 60 V, 10 A, 140 m廓

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

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November 2013

Thermal Characteristics

FQD13N06

N-Channel QFET® MOSFET

60 V, 10 A, 140 mΩ

Description

FQD13N06 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• 10 A, 60 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,

ID = 5.0 A

• Low Gate Charge (Typ. 5.8 nC)

• Low Crss (Typ. 15 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings T

C = 25°C unless otherwise noted.

D-PAK

G

S

D

G

S

D

Symbol

Parameter

FQD13N06TM

Unit

RJC

Thermal Resistance, Junction to Case, Max.

4.5

oC/W

RJA

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.

50

Symbol

Parameter

FQD13N06TM

Unit

VDSS

Drain-Source Voltage

60

V

ID

Drain Current

- Continuous (TC = 25°C)

10

A

- Continuous (TC = 100°C)

6.3

A

IDM

Drain Current

- Pulsed

(Note 1)

40

A

VGSS

Gate-Source Voltage

± 25

V

EAS

Single Pulsed Avalanche Energy

(Note 2)

85

mJ

IAR

Avalanche Current

(Note 1)

10

A

EAR

Repetitive Avalanche Energy

(Note 1)

2.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

7.0

V/ns

PD

Power Dissipation (TA = 25°C) *

2.5

W

Power Dissipation (TC = 25°C)

28

W

- Derate above 25°C

0.22

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering,

1/8" from case for 5 seconds

300

°C

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