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2SK2903-01MR Scheda tecnica(PDF) 1 Page - Fuji Electric |
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2SK2903-01MR Scheda tecnica(HTML) 1 Page - Fuji Electric |
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1 / 4 page  1 Item Symbol Rating Unit Drain-source voltage VDS 60 Continuous drain current ID ±50 Pulsed drain current ID(puls] ±200 Gate-source voltage VGS ±30 Maximum Avalanche Energy EAV*1 720.8 Max. power dissipation PD 50 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK2903-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Gate(G) Source(S) Drain(D) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=60V VGS=±30V ID=40A VGS=10V ID=40A VDS=25V VCC=30V ID=80A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA mA nA m Ω S pF A V ns µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 2.5 62.5 °C/W °C/W Symbol BVDSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS Tch=25°C VGS=0V Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz L=100 µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C V A A V mJ W °C °C *1 L=0.384mH, Vcc=24V 60 2.5 3.0 3.5 10 500 0.2 1.0 10 100 9.5 12 20 40 3100 4650 1300 1950 350 530 20 30 85 120 88 130 65 120 50 1.0 1.5 70 0.13 -55 to +150 TO-220F15 3. Source 2.54 |
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