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2SK2901-01S Scheda tecnica(PDF) 2 Page - Fuji Electric |
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2SK2901-01S Scheda tecnica(HTML) 2 Page - Fuji Electric |
2 / 4 page 2 Characteristics 2SK2901-01L,S FUJI POWER MOSFET 0 50 100 150 0 20 40 60 80 Power Dissipation PD=f(Tc) Tc [°C] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 VDS [V] Safe operating area ID=f(VDS):D=0.01,Tc=25°C t= 1µs 10µs 1ms 10ms 100ms 100µs D.C. t T D= t T 012 345 0 20 40 60 80 100 5.5V 6V 4.0V 3.5V 4.5V 10V 8V 5V VGS=20V Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C VDS [V] 024 68 10 0.1 1 10 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C VGS [V] 10 0 10 1 10 2 10 0 10 1 10 2 Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C ID [A] 0 20 40 60 80 100 0 10 20 30 40 50 6V ID [A] Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 8V 10V 20V 4.5V 5.0V 4.0V VGS= 3.5V 5.5V |
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