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STY112N65M5 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STY112N65M5 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
1 / 12 page This is information on a product in full production. May 2012 Doc ID 15321 Rev 3 1/ 12 STY112N65M5 N-channel 650 V, 0.019 Ω, 96 A, MDmesh™ V Power MOSFET in Max247 package Datasheet — production data Features ■ Higher VDSS rating ■ Higher dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Applications ■ Switching applications Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Order code VDSS @TjMAX RDS(on) max ID STY112N65M5 710 V < 0.022 Ω 96 A 1 2 3 Max247 Table 1. Device summary Order code Marking Package Packaging STY112N65M5 112N65M5 Max247 Tube www.st.com |
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