2SK1969-01 datasheet(1/2 Pages) FUJI

Il numero della parte	2SK1969-01

Spiegazioni elettronici	N-channel MOS-FET

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Produttore elettronici	FUJI [Fuji Electric]

Homepage	http://www.fujielectric.co.jp/eng/fdt/scd

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2SK1969-01

N-channel MOS-FET

FAP-IIIA Series

60V

0,017Ω 50A 125W

> Features

> Outline Drawing

-

High Current

-

Low On-Resistance

-

No Secondary Breakdown

-

Low Driving Power

-

High Forward Transconductance

-

Avalanche Proof

-

Including G-S Zener-Diode

> Applications

-

Motor Control

-

General Purpose Power Amplifier

-

DC-DC Converters

> Maximum Ratings and Characteristics

> Equivalent Circuit

-

Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

V DS

60

V

Drain-Gate-Voltage (RGS=20K

Ω)

V DGR

60

V

Continous Drain Current

I D

50

A

Pulsed Drain Current

I D(puls)

200

A

Gate-Source-Voltage

V GS

±20

V

Max. Power Dissipation

P D

125

W

Operating and Storage Temperature Range

T ch

150

°C

T stg

-55 ~ +150

°C

-

Electrical Characteristics (TC=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown-Voltage

V (BR)DSS

ID=1mA

VGS=0V

60

V

Gate Threshhold Voltage

V GS(th)

ID=1mA

VDS=VGS

1,0

1,5

2,0

V

Zero Gate Voltage Drain Current

I DSS

VDS=60V

Tch=25°C

500

µA

VGS=0V

Tch=125°C

1,0

mA

Gate Source Leakage Current

I GSS

VGS=±16V

VDS=0V

10,0

µA

Drain Source On-State Resistance

R DS(on)

ID=25A

VGS=4V

0,019

0,027

Ω

ID=25A

VGS=10V

0,013

0,017

Ω

Forward Transconductance

g fs

ID=25A

VDS=25V

20

40

S

Input Capacitance

C iss

VDS=25V

2600

3900

pF

Output Capacitance

C oss

VGS=0V

1000

1500

pF

Reverse Transfer Capacitance

C rss

f=1MHz

630

950

pF

Turn-On-Time ton (ton=td(on)+tr)

t d(on)

VCC=30V

20

30

ns

t r

ID=50A

210

320

ns

Turn-Off-Time toff (ton=td(off)+tf)

t d(off)

VGS=10V

520

780

ns

t f

RGS=25

Ω

420

630

ns

Avalanche Capability

I AV

L = 100µH

Tch=25°C

50

A

Continous Reverse Drain Current

I DR

50

A

Pulsed Reverse Drain Current

I DRM

200

A

Diode Forward On-Voltage

V SD

IF=2xIDR VGS=0V Tch=25°C

1,45

2,18

V

Reverse Recovery Time

t rr

IF=IDR VGS=0V

85

120

ns

Reverse Recovery Charge

Q rr

-dIF/dt=100A/µs Tch=25°C

0,16

µC

-

Thermal Characteristics

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Thermal Resistance

R th(ch-a)

channel to air

35

°C/W

R th(ch-c)

channel to case

1,0

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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