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BU2522AF Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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BU2522AF Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2522AF CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6.0A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6.0A ;IB=1.2A 1.3 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 0.25 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 8 CC Collector capacitance IE=0 ; VCB=10V; f=1MHz 115 pF |
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Descrizione simile - BU2522AF |
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