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2SK1944-01 Scheda tecnica(PDF) 1 Page - Fuji Electric

Il numero della parte 2SK1944-01
Spiegazioni elettronici  N-channel MOS-FET
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Produttore elettronici  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK1944-01 Scheda tecnica(HTML) 1 Page - Fuji Electric

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2SK1944-01
N-channel MOS-FET
FAP-IIA Series
900V
2,8Ω
5A
100W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
900
V
Drain-Gate-Voltage (RGS=20K
Ω)
V DGR
900
V
Continous Drain Current
I D
5
A
Pulsed Drain Current
I D(puls)
20
A
Gate-Source-Voltage
V GS
±30
V
Max. Power Dissipation
P D
100
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V (BR)DSS
ID=1mA
VGS=0V
900
V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I DSS
VDS=900V
Tch=25°C
10
500
µA
VGS=0V
Tch=125°C
0,2
1,0
mA
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=2,5A
VGS=10V
2,0
2,8
Forward Transconductance
g fs
ID=2,5A
VDS=25V
3,0
6,0
S
Input Capacitance
C iss
VDS=25V
1200
1800
pF
Output Capacitance
C oss
VGS=0V
120
180
pF
Reverse Transfer Capacitance
C rss
f=1MHz
40
60
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
25
40
ns
t r
ID=5A
25
40
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
85
130
ns
t f
RGS=10
45
70
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
5
A
Continous Reverse Drain Current
I DR
5
A
Pulsed Reverse Drain Current
I DRM
20
A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
0,93
1,4
V
Reverse Recovery Time
t rr
IF=IDR VGS=0V
400
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
1,5
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-a)
channel to air
35
°C/W
R th(ch-c)
channel to case
1,25
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com


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