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2SK1083-MR Scheda tecnica(PDF) 2 Page - Fuji Electric |
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2SK1083-MR Scheda tecnica(HTML) 2 Page - Fuji Electric |
2 / 2 page N-channel MOS-FET 2SK1083-MR 60V 0,22Ω 8A 20W F-III Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics ↑ 1 ↑ 2 ↑ 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ 4 ↑ 5 ↑ 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ 7 ↑ 8 ↑ ↑ 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Transient Thermal impedance ↑ 10 ↑ 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice! |
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