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BC808 Scheda tecnica(PDF) 1 Page - Continental Device India Limited |
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BC808 Scheda tecnica(HTML) 1 Page - Continental Device India Limited |
1 / 4 page Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G ABSOLUTE MAXIMUM RATINGS BC807 B C808 Collector–emitter voltage (VBE = 0) –VCES max. 50 30 V Collector–emitter voltage (open base) –VCE0 max. 45 25 V Collector current (peak value) –ICM max. 1000 mA Total power dissipation up to Tamb = 25 °C Ptot max. 250 mW Junction temperature Tj max. 150 °C Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V fT >80 MHz BC807 BC808 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
Codice articolo simile - BC808 |
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Descrizione simile - BC808 |
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