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BF840 Scheda tecnica(PDF) 2 Page - Continental Device India Limited |
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BF840 Scheda tecnica(HTML) 2 Page - Continental Device India Limited |
2 / 3 page Continental Device India Limited Data Sheet Page 2 of 3 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCB0 max. 40 V Collector–emitter voltage (open base) VCE0 max. 40 V Emitter–base voltage (open collector) VEB0 max. 4 V Collector current (d.c.) IC max. 25 mA Total power dissipation up to Tamb = 25 °C* Ptot max. 250 mW Storage temperature Tstg –55 to +150 °C Junction temperature Tj max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j–a 500 K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector cut–off current IE = 0; VCB = 20 V ICBO max. 100 nA Base–emitter voltage IC = 1 mA; VCE = 10 V VBE typ. 700 mV 650 to 740 mV BF840 BF841 Base current IC: 1 mA; VCE = 10 V IB 4,5–15 8–28 m A Transition frequency at f = 100 MHz IC = 1 mA; VCE = 10 V fT typ. 380 380 MHz Feedback capacitance at f = 1 MHz IC = 1 mA; VCE = 10 V Cre typ. 0,3 0,3 pF Noise figure IC = 1 mA; VCE = 10 V; f = 0,2 MHz; RS = 200 W F typ. 1,5 2,0 dB BF840 BF841 |
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