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MJ1001 Scheda tecnica(PDF) 1 Page - Savantic, Inc. |
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MJ1001 Scheda tecnica(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT MJ1000 60 VCBO Collector-base voltage MJ1001 Open emitter 80 V MJ1000 60 VCEO Collector-emitter voltage MJ1001 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A IB Base current 0.1 A PD Total power dissipation TC=25 90 W Tj Junction temperature 200 Tstg Storage temperature -55~200 Fig.1 simplified outline (TO-3) and symbol |
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