STGBL6NC60DIT4 datasheet(5/18 Pages) STMICROELECTRONICS

Il numero della parte	STGBL6NC60DIT4

Spiegazioni elettronici	6 A, 600 V hyper fast IGBT

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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5 / 18 page

STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI

Electrical characteristics

Doc ID 15536 Rev 2

5/18

Table 6.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 3 A

RG= 10 Ω, VGE = 15 V

(see Figure 18)

-

6.7

3.7

930

-

ns

A/µs

td(on)

tr

(di/dt)on

Turn-on delay time

Current rise time

Turn-on current slope

VCC = 390 V, IC = 3 A

RG = 10 Ω, VGE = 15 V,

Tj =125 °C

(see Figure 18)

-

6.5

4

820

-

ns

A/µs

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 3 A,

RGE = 10 Ω, VGE = 15 V

(see Figure 18)

-

17

46

47

-

ns

tr(Voff)

td(off)

tf

Off voltage rise time

Turn-off delay time

Current fall time

VCC = 390 V, IC = 3 A,

RGE = 10 Ω, VGE =15 V,

Tj = 125 °C

(see Figure 18)

-

35

67

55

-

ns

Table 7.

Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

(1)

Eoff

(2)

Ets

1.

Eon is the turn-on losses when a typical diode is used in the test circuit in

(see Figure 19). If the IGBT is

offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode

are at the same temperature (25°C and 125°C)

2.

Turn-off losses include also the tail of the collector current

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 3 A

RG = 10 Ω, VGE=15 V

(see Figure 18)

-

32

24

56

-

µJ

Eon

(1)

Eoff

(2)

Ets

Turn-on switching losses

Turn-off switching losses

Total switching losses

VCC = 390 V, IC = 3 A

RG = 10 Ω, VGE = 15 V,

Tj = 125 °C

(see Figure 18)

-

51

46

97

-

µJ

Table 8.

Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

Forward on-voltage

IF = 1 A

IF = 3 A

IF = 3 A, Tj=125 °C

-1.8

1.3

1.7

V

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 3 A, VR = 40 V,

di/dt = 100 A/

µs

(see Figure 19)

-

23

21

1.5

ns

nC

A

trr

Qrr

Irrm

Reverse recovery time

Reverse recovery charge

Reverse recovery current

IF = 3 A,VR = 40 V,

Tj =125 °C, di/dt = 100 A/µs

(see Figure 19)

-

47

51

2

ns

nC

A

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