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NE25139 Scheda tecnica(PDF) 1 Page - California Eastern Labs |
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NE25139 Scheda tecnica(HTML) 1 Page - California Eastern Labs |
1 / 7 page PART NUMBER NE25139 PACKAGE OUTLINE 39 SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB 1.1 2.5 GPS Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB 16 20 BVDSX Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µAV 13 IDSS Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V mA 5 20 40 VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA V -3.5 VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA V -3.5 IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 µA10 IG2SS Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 µA10 |YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz mS 18 25 35 CISS Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.5 1.0 1.5 CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.02 0.03 FEATURES • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) GENERAL PURPOSE DUAL-GATE GaAS MESFET NE25139 DESCRIPTION The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. ELECTRICAL CHARACTERISTICS (TA = 25°C) California Eastern Laboratories 20 0 10 0 5 10 0 10 GPS VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 mA f = 900 MHz 5 NF |
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