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FDS4465 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDS4465 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDS4465 Rev C2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –12 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.6 –1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –13.5 A VGS = –2.5 V, ID = –12 A VGS = –1.8 V, ID = –10.5 A VGS=–4.5 V, ID =–13.5A, TJ=125 °C 6.7 8.0 9.8 9.0 8.5 10.5 14 13 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A gFS Forward Transconductance VDS = –5 V, ID = –13.5 A 70 S Dynamic Characteristics Ciss Input Capacitance 8237 pF Coss Output Capacitance 1497 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time 20 36 ns tr Turn–On Rise Time 24 38 ns td(off) Turn–Off Delay Time 300 480 ns tf Turn–Off Fall Time VDD = –10V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω 140 224 ns Qg Total Gate Charge 86 120 nC Qgs Gate–Source Charge 20 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –13.5 A, VGS = –4.5 V 11 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.6 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1in 2 pad of 2 oz copper b) 105 °C/W when mounted on a .04 in 2 pad of 2 oz copper c) 125 °C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Rg Gate Resistance 750 pF 0.1 3.0 6.0 Ω |
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