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2N3440L Scheda tecnica(PDF) 1 Page - Microsemi Corporation |
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2N3440L Scheda tecnica(HTML) 1 Page - Microsemi Corporation |
1 / 6 page LDS-0022-1, Rev. 1 (111683) ©2011 Microsemi Corporation Page 1 of 6 2N3439L thru 2N3440L Available on commercial versions NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. TO-5 Package Also available in: TO-39 (TO-205AD) package (leaded) 2N3439 – 2N3440 U4 package (surface mount) 2N3439U4 – 2N3440U4 UA package (surface mount) 2N3439UA - 2N3440UA Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N3439L through 2N3440L series. • JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368. • RoHS compliant versions available (commercial grade only). • V CE(sat) = 0.5 V @ IC = 50 mA. • Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA. • Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA. APPLICATIONS / BENEFITS • General purpose transistors for medium power applications requiring high frequency switching and low package profile. • Military and other high-reliability applications. MAXIMUM RATINGS (TC = +25°C unless otherwise noted) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Parameters / Test Conditions Symbol 2N3439L 2N3440L Unit Collector-Emitter Voltage V CEO 350 250 V Collector-Base Voltage V CBO 450 300 V Emitter-Base Voltage V EBO 7.0 V Collector Current IC 1.0 A Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C (2) P D 0.8 5.0 W Operating & Storage Junction Temperature Range TJ , Tstg -65 to +200 °C Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C. 2. Derate linearly @ 28.5 mW/°C for TC > +25 °C |
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