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2N3440L Scheda tecnica(PDF) 1 Page - Microsemi Corporation

Il numero della parte 2N3440L
Spiegazioni elettronici  NPN LOW POWER SILICON TRANSISTOR
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Produttore elettronici  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3440L Scheda tecnica(HTML) 1 Page - Microsemi Corporation

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LDS-0022-1, Rev. 1 (111683)
©2011 Microsemi Corporation
Page 1 of 6
2N3439L thru 2N3440L
Available on
commercial
versions
NPN LOW POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
These devices are also available in TO-39 and low profile U4 and UA packaging. Microsemi
also offers numerous other transistor products to meet higher and lower power ratings with
various switching speed requirements in both through-hole and surface-mount packages.
TO-5 Package
Also available in:
TO-39 (TO-205AD)
package
(leaded)
2N3439 – 2N3440
U4 package
(surface mount)
2N3439U4 – 2N3440U4
UA package
(surface mount)
2N3439UA - 2N3440UA
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N3439L through 2N3440L series.
JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368.
RoHS compliant versions available (commercial grade only).
V CE(sat) = 0.5 V @ IC = 50 mA.
Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.
Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions
Symbol
2N3439L
2N3440L
Unit
Collector-Emitter Voltage
V CEO
350
250
V
Collector-Base Voltage
V CBO
450
300
V
Emitter-Base Voltage
V EBO
7.0
V
Collector Current
IC
1.0
A
Total Power Dissipation
@ TA = +25 °C
(1)
@ TC = +25 °C
(2)
P D
0.8
5.0
W
Operating & Storage Junction Temperature Range
TJ , Tstg
-65 to +200
°C
Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.
2. Derate linearly @ 28.5 mW/°C for TC > +25 °C


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