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2SC2658-Q Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC2658-Q Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page 2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 19-Sep-2012 Rev.A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120~270 180~390 270~560 Marking BQ BR BS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 7 V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 100 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO 60 - - V IC=50µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 50 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 7 - - V IE=50µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µ A VCB=60V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µ A VEB=7V, IC=0 DC Current Gain hFE 120 - 560 VCE=6V, IC=1mA Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V IC=50mA, IB=5mA Transition Frequency fT - 180 - MHz VCE=12V, IC=2mA, f=100MHz Collector Output Capacitance Cob - - 3.5 pF VCB=12V, IE=0, f=1MHz SOT-723 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.150 1.250 F 0.170 0.270 B 0.750 0.850 G 0.270 0.370 C - 0.500 H 0 0.050 D 1.150 1.250 I - 0.150 E 0.800TYP. |
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