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SI7139DP Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI7139DP Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com 2 Document Number: 65299 S09-2031-Rev. A, 05-Oct-09 Vishay Siliconix Si7139DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 19 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 5.2 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.2 - 2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 5 On-State Drain Currenta ID(on) VDS ≥ - 10 V, VGS = - 10 V - 50 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 15 A 0.0042 0.0055 Ω VGS = - 4.5 V, ID = - 10 A 0.0074 0.0090 Forward Transconductancea gfs VDS = - 10 V, ID = - 15 A 54 S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 4230 pF Output Capacitance Coss 695 Reverse Transfer Capacitance Crss 670 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 97 146 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 49.5 74.5 Gate-Source Charge Qgs 11.7 Gate-Drain Charge Qgd 22.6 Gate Resistance Rg f = 1 MHz 0.4 1.6 3.2 Ω Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 17 34 ns Rise Time tr 12 24 Turn-Off DelayTime td(off) 56 110 Fall Time tf 12 24 Turn-On Delay Time td(on) VDD = - 15 V, RL = 1.5 Ω ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 70 140 Rise Time tr 58 115 Turn-Off DelayTime td(off) 47 90 Fall Time tf 24 48 Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current IS TC = 25 °C - 40 A Pulse Diode Forward Current ISM - 70 Body Diode Voltage VSD IS = - 3 A, VGS = 0 V - 0.72 - 1.1 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 22 45 nC Reverse Recovery Fall Time ta 14 ns Reverse Recovery Rise Time tb 16 |
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