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MTB80N08J3 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
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MTB80N08J3 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C909J3 Issued Date : 2013.04.01 Revised Date : 2013.12.30 Page No. : 5/ 9 MTB80N08J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -65 -35 -5 25 55 85 115 145 175 Tj, Junction Temperature(°C) ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 Qg, Total Gate Charge(nC) VDS=40V ID=15A Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) TC=25°C, Tj=150°C VGS=10V, θJC=3.2°C/W Single Pulse DC 100ms RDSON Limited 1s 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=10V, RθJC=3.2°C/W |
Codice articolo simile - MTB80N08J3 |
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Descrizione simile - MTB80N08J3 |
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