MTB80N08J3 datasheet(5/9 Pages) CYSTEKEC

Il numero della parte	MTB80N08J3

Spiegazioni elettronici	N-Channel Enhancement Mode Power MOSFET

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Produttore elettronici	CYSTEKEC [Cystech Electonics Corp.]

Homepage	http://www.cystekec.com

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5 / 9 page

CYStech Electronics Corp.

Spec. No. : C909J3

Issued Date : 2013.04.01

Revised Date : 2013.12.30

Page No. : 5/ 9

MTB80N08J3

CYStek Product Specification

Typical Characteristics(Cont.)

Capacitance vs Drain-to-Source Voltage

10

100

1000

10000

0.1

1

10

100

VDS, Drain-Source Voltage(V)

C oss

Ciss

Crss

Threshold Voltage vs Junction Tempearture

0.4

0.6

0.8

1

1.2

1.4

-65

-35

-5

25

55

85

115

145

175

Tj, Junction Temperature(°C)

ID=250μA

ID=1mA

Forward Transfer Admittance vs Drain Current

0.01

0.1

1

10

100

0.001

0.01

0.1

1

10

100

ID, Drain Current(A)

Ta=25°C

Pulsed

VDS=5V

Gate Charge Characteristics

0

2

4

6

8

10

0

5

10

15

20

25

30

Qg, Total Gate Charge(nC)

VDS=40V

ID=15A

Maximum Safe Operating Area

0.01

0.1

1

10

100

0.1

1

10

100

1000

VDS, Drain-Source Voltage(V)

TC=25°C, Tj=150°C

VGS=10V, θJC=3.2°C/W

Single Pulse

DC

100ms

RDSON

Limited

1s

100μs

1ms

10ms

Maximum Drain Current vs Case Temperature

0

2

4

6

8

10

12

14

16

18

25

50

75

100

125

150

175

TC, Case Temperature(°C)

VGS=10V, RθJC=3.2°C/W

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