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2SC4093 Scheda tecnica(PDF) 1 Page - NEC |
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2SC4093 Scheda tecnica(HTML) 1 Page - NEC |
1 / 8 page DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DATA SHEET Document No. P10365EJ3V1DS00 (3rd edition) Date Published March 1997 N Printed in Japan 1991 © DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteritics, and is contatined in a 4 pins mini-mold package which enables high-isolation gain. FEATURES • Low Noise NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gains S21e2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1.0 GHz ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC4093-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC4093-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4093) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C PACKAGE DIMENSIONS (Units: mm) PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter 5 ° 5 ° 5 ° 5 ° 2.8 +0.2 −0.3 1.5 +0.2 −0.1 |
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