Description

6/10/04

www.irf.com

1

IRF7350PbF

SO-8

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

ƒ

–––

62.5

°C/W

Thermal Resistance

N-Ch

P-Ch

D1

N-CHANNEL MOSFET

P-CHANNEL MOSFET

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

Rectifier utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with the fast switching

well known for, provides the designer with an extremely efficient and reliable

device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety

of power applications. With these improvements, multiple devices can be

used in an application with dramatically reduced board space. The package

is designed for vapor phase, infra red, or wave soldering techniques.

Parameter

Units

A

Absolute Maximum Ratings

Max.

N-Channel

P-Channel

Drain-to-Source Voltage

100

-100

2.1

-1.5

1.7

-1.2

Pulsed Drain Current



8.4

-6.0

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Single Pulse Avalanche Energy

„

35

51

mJ

Gate-to-Source Voltage

± 20

± 20

V

dv/dt

4.0

4.3

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

PD - 95367